Powertrain modularity
Total results returned: 2
Welcome to the Powertrain Modularity and Integration page, your central resource for exploring the latest advancements in electric vehicle powertrain systems. This page houses a curated collection of reports, scientific papers, and other key materials that delve into modular powertrain architectures, their benefits for EV performance, and streamlined integration processes. Whether you're researching flexible design approaches or seeking insights into how modularity can improve efficiency and reduce costs, these resources provide valuable information to support your work in advancing electric mobility.
Active Gate Drivers for High-Power, High-Frequency WBG devices
This document presents the analysis, development, and testing of advanced active gate drivers (AGD) for high-power, high-frequency wide bandgap (WBG) devices, specifically focusing on Gallium Nitride (GaN) transistors. It aims to improve the performance of power converters by reducing circuit losses, overshoots, and electromagnetic interference (EMI) through a novel gate driving approach based on high-frequency PWM. The findings and methodologies are intended to enhance the efficiency and reliability of power electronic systems, particularly in high-power applications like those in the RHODaS project.
Academic Institutions, Electric Vehicle Manufacturers, Electrical Engineering Students, Industrial Power Converter Designers, Power Electronic Engineers, Researchers in Semiconductor Technology
Active Gate Drivers, E-Volve Cluster, Gallium Nitride, High-Frequency Pulse Width Modulation, RHODaS, Silicon Carbide, Wide Bandgap Devices
Link:
Rhodas deliverable
Selection of Switching-Cell Main Power Semiconductor Devices
This deliverable reports the selection of the optimum power devices for implementing the SCAPE high-voltage switching cells, after a literature review and commercial availability check. In addition to suitable electrical characteristics, the selection of candidates considered the suitability and availability of bare-die components for their subsequent chip embedding process. Two SiC MOSFET references have been selected and samples have been obtained for an initial test campaign (GeneSiC G4R12MT07. 750V – 12 mΩ and Wolfspeed CPM3-0650-0015A. 650V – 15 mΩ). For the development of the low-voltage switching cells of the auxiliary SCAPE converters, GaN HEMTs from EPC will be selected. The deliverable also includes a prospective and literature review about power device emerging technologies.
Electric Powertrain Researchers, Electric Vehicle Researchers, Electrical Engineering Researchers, European Commission
E-Volve Cluster, Power Electronics, SCAPE, Semiconductors, SiC and GaN Devices, Switching-Cell Array, Wide Bandgap Devices
Link:
SCAPE Deliverable